Fraunhofer Institute for Electronic Nano Systems
Fraunhofer Institute for Electronic Nano Systems
© Jürgen Lösel for cfaed, TU Chemnitz
cluster_tool_for_deposition_processe

Cluster tool for deposition processes

© Jürgen Lösel for cfaed, TU Chemnitz

E-beam lithography VSB-254

© Fraunhofer ENAS

Applied Materials Mirra for CMP

© Fraunhofer ENAS

Cu/Sn solid liquid interdiffusion bonding

© Fraunhofer ENAS

Roll to roll printed copper patterns

© Fraunhofer ENAS

Processes

Cleaning

RCA clean
DI-water flushing

High-temperature processes

Thermal oxidation Dry, wet, HCl
Annealing Inert, reducing, oxidizing, ambient and forming gas

Deposition

Physical vapor deposition

Sputtering Metallization Ag, Al, Au, Co, Cr, Cu, Mo, Ni, Pd, Pt, Ru, Sc, Ta, Ti, W, Nb, Zr
  Metal alloys AlSiCu, AlSi, AlTi, AlGe, TiPd, CrPd
  Metallic glass PdCuSi, AlTiW, CuCrPd, (AlNiY), (NiNbZr)
  Memristive BiFeO3, TiO2, TixO(2x-1)
  Oxides, Nitrides Al2O3, CuOx, SiO2, TaN, Ta2O5, TiN, TiO2, Pyrex
  Piezoelectric AlN, AlScN
  Photonics, Optics AlN, ITO
  Semiconductors Ge, Si
  Spintronics Ni, NiFeCr, Ru, Pt, Cu, Al, Co, MgO, MnIr20, Co40Fe40B20, Ni81Fe19, Co90Fe10, Co20Fe60B20
  Superconductors CeO2, SrTiO3, YBa2Cu3O7
  Packaging Al-Pd-Multilayer, Ti-Si-Multilayer, CuO-Al-Multilayer
  Phase Change GeTe, Ge2Sb2Te5
     
Ion beam sputter deposition (IBSD) Al, Co, Cr, Cu, Mo, Ni, Ru, Ta, Pt, Ti, Y, Sc  
Electron beam evaporation Al, Co, Cu, Ni, Pd, Pt  
Thermal evaporation (follow up processes under inert atmosphere possible)
  Organic semiconductors
  Metal oxides (e.g., MoO3)
  Metals (e.g., Ca)
  Dielectrics (e.g., LiF)

Chemical vapor deposition

Plasma enhanced CVD TEOS-SiO2, SiO2, Si3N4, SixOyNz, SiCOH, CF/CH polymers, amorphous silicon, diamond-like carbon, CNTs
Low-Pressure CVD Si3N4, polysilicon, SWCNT/MWCNT
Metal-organic CVD Cu, Co, TiN
CVD Parylene N, C, D, F, AF4

Atomic layer deposition

Metals Co
Metal oxides Al2O3, TiO2, HfO2, ZnO

Others

Nanomaterial dispersion preparation and analytics
Dispersion-based assembly of semiconducting CNTs on waferlevel
CVD of vertically-aligned CNTs (VACNT)
Printing on multilayer graphene
Transfer of monolayer graphene
Transfer of VACNTs
Nano device integration steps: structuring, cleaning, contacting, functionalization, passivation
Spin coating under inert atmosphere
  Nanoparticle dispersions (e.g., ZnO, quantum dots)
  Organic semiconductors
  Polymers

Lithography

Electron beam lithography Resolution: < 50 nm
Projection lithography 350 nm
Contact lithography 2 µm
Nano imprint lithography Resolution: 50 nm
Grayscale lithography with electron beam lithography and projection lithography
Double side lithography  
Mix and match lithography (electron beam lithography and projection lithography in one resist layer or in sequential resist layers)
Spray coating (thin to thick resists)
  Positive tone resist: 3.6 - 14.5 µm (different resists)
  Negative tone resist: 5.5 - 11 µm (different resists)
Spin coating (thin to thick resists)
  Positive tone resist: from 0.2 - 100 µm (different resists)
  Negative tone resist: from 0.2 - 100 µm (different resists)
CD-SEM characterization
Confocal microscope characterization
Thin and thick wafer substrates of different material and wafer size
NIL mastering  
Plasma strip Oxidizing, reducing

Patterning

Wet processes    
  Metals Al, Au, Cr, Cu, Pt, Ti, W, Ag, Pd, Sn
  Non-metals AlN, CuxO, Si3N4, SiO2, Si, polysilicon, glass, ITO, ZnO, BFO, HfO2
Dry processes    
  Metals Al, Cr, Cu, Ti, Ta, TiW, W
  Non-metals Si, polysilicon, SiC, SiO2, Si3N4, silicides, TiN, resists, glass, low-k dielectrics
  Deep reactive ion etching Si
Lift-off    
Gas phase etching of SiO2
Assembly of CNTs

Chemical mechanical polishing and wafer thinning

CMP for patterning Al, Cu, Ge, Si, SiO2, W, barriers (TiN/Ti, TaN/Ta), ceramics (LiNbO3, LiTaO3), glass, isolators, stainless steel  
Planarization and surface finishing  
Grinding Si, glass, ceramics  
Spin etch Si, glass  

3D Integration

Through Silicon Vias (TSVs)        
  Integration concepts via last, via middle    
  TSV type full fill, conformal metallization    
  Substrates silicon, glass    
  Main processes deep etch, isolation, box-etch, metallization    
  Post-TSV process Front-/backside RDL incl. UBM    
Wafer thinning Si, glass, ceramics    
Thin wafer handling Temporary bond, Taiko wafer    
Wafer bonding  Hybrid, thermocompression, fusion, etc.  

0 and 1st level packaging

Thin film encapsulation

Biocompatible packaging (Parylene (C, D, F)) incl. pre-treatment (silanization)    
High aspect ratio microstructures    

Wafer bonding (with or without interlayer)

Conventional, permanent wafer bonding
  Silicon fusion bonding and plasma-activated bonding RT - 100 °C, 100 °C - 200 °C, 200 °C - 400 °C, > 400 °C / Si, borosilicate glass, foturan glass, quartz glass, LiTaO3, LTCC, stainless steel
  Anodic bonding RT - 550 °C, 0 - 500 kPa, 0 - 2.000 V, Si, SiO2, Si3N4, borofloat, pyrex, SD2
  Glass frit bonding (leaded and lead-free) Si, glass
  Eutectic bonding Au-Si, Au-Sn, Al-Ge
  Thermo compression bonding Al-Al, Cu-Cu, Au-Au (nanoporous gold), plasma enhanced Cu-Cu bonding
  SLID bonding Au-In, Au-Sn, Cu-In, Cu-Sn
Low-temperature, permanent wafer bonding  
  Reactive bonding Si, Al2O3, Al, Cu, borosilicate glass, foturan glass, quartz glass, LiTaO3, covar, stainless steel
  Plasma activated bonding glass-frit, glass-silicon
  Hybrid bonding SiO2/Cu
  Sintering Ag, Cu
Characterization and analysis    
  Yield, bond strength, hermeticity, SAM, interface material analysis, cross-section, SEM, FIB
Temporary wafer bonding
  Bonding and debonding thin wafer processing

Packaging of integrated circuits

Wire bonding  
  Al-Si 18, 32 µm
  Al 125, 250, 300 µm
  Au 25, 30, 50, 125 µm
  Cu 32 µm
Chip bonding   Flip-chip, chip-to-chip (C2C), chip-to-wafer (C2W), multi-chip-module (MCM), chip-to-board (C2B), surface-mounting technology (SMT), printed contacts
Encasings and Caps   Metal, glass, ceramics, plastics, thin film encapsulation (Parylene)
Dicing 4" to 8" Silicon, glass, metals, compound materials

Laser micromachining – laser work station

Picosecond laser (10 W)   266 nm, 355 nm, 532 nm, 1064 nm, pulsed energy
Thulium fiber laser (20 W) 1908 nm, continuous wave
Key facts Feature size down to 10 µm
  Positioning accuracy 0.5 µm
  Camer-based alignment
Materials    
  Polymers
 PC, PMMA, PET, COC, acrylic resin, adhesive tapes (incl. cover sheets)
  Ceramics LiTaO3, Al2O3, LiNbO3, PZT
  Metals Al, Mo, Au, Pd, stainless steel
  Glass     borofloat, quartz, BK7, microscope slides
  Semiconductors Si (mono and polycrystalline), ITO
  Others solder, reactive foils, films with nanoparticles
Processes    
  Cutting, drilling, 2.5D structuring, marking, trimming
  Polymer welding  
  Customer-specific process development

Patterning based on printing

Inkjet   Sheet-fed, web-fed (R2R), robot-guided on 3D objects
Aerosol jet   Sheet-fed
Dispensing   Robot-guided on 3D objects
Screen   Sheet-fed, web-fed (R2R)
Functionality formation by sintering Thermal, IR, UV, electrical, chemical, plasma, laser, IPL, excimer lamp
Materials    
  Inks Conductive inks: Ag, Cu, Au, C, Zn, ..., semiconductive inks (organic and oxide-based), dielectric inks (organic)
  Substrates Polymer films (PET, PEN, PI, PC, PVC, PP, ...), paper (uncoated and coated), congurated cardboard, glass, ceramics, textiles, sheet metal, rubber

For your support, we offer the following research and development services:

  • Adaptation of printing technologies (selection of materials and process technologies) for the manufacturing of printed products according to customer requirements
  • Knowledge transfer of existing printing technologies for functional printing (web fed and sheet fed), their field of application and implementation (e.g. printed flexible and hybrid electronic)
  • Design and demonstrator fabrication of printed components (CCM/MEA, conducting paths, electrodes, antennas, batteries, sensors, resistors, transistors, capacitors, diodes, protective layers, etc.) according to customer requirements
  • Product and circuit design including prototyping of printed, flexible, and hybrid electronic
  • Investigations of printability on any desired inks with selected printing technology Implementation of printing tests according to customer requirements:
    • Web-fed (reel-to-reel) and sheet fed | screen printing and inkjet
    • Printing of 3D objects via inkjet and dispenser
  • Characterization of printed functional layers (surface and electrical properties): µXRF, REM analysis, tactile profilometry, 4-point measurement, measurement of ampacity, radio frequency properties, etc.
  • Characterization of printed components (CCM/MEA, conducting paths, electrodes, antennas, batteries, resistors, etc.) 
  • Placement of SMD components on printed conducting paths