Analytics/Characterization

Preparation techniques for analytics

  • Focused ion beam (FIB)
  • Preparation for micrograph sections
  • Sputtering: carbon, metals

 

Process-accompanying analytical methods

  • Profilometry: tactile, optical (Datac, AFM, reflectometer, white light)
  • XPS: surface, depth profile
  • Wafer thickness
  • Sheet resistance
  • Wafer bow measurement
  • Adhesion tests: 4 point bending
  • Life time scanner
  • Thermogavimetric analysis and differential scanning calorimetry
  • (in situ) XPS spectroscopy
  • (in situ) Raman spectroscopy

 

In situ plasma diagnostics for process optimization

  • Optical emission spectroscopy
  • Quadrupol mass spectrometry
  • Quantum cascade laser absorption spectroscopy
  • Langmuir probe

 

Optical inspection

  • Spectroscopy: EDX, IR, FTIR, NIR, UV/Vis, fluorescence, Raman, spectral ellipsometry
  • Microscopy: light, SEM, SEM/FIB, AFM, TEM, SAM, laser scanning, thermographic
  • X-ray computer tomography
  • White light interferometry

 

Bond quality evaluation

  • Bonding strength
    • Micro Chevron test (MCT)
    • Pull test
    • Razorblade test
    • Compression shear test
  • Nondestructive analysis
    • IR and ultrasonic microscopy
  • Hermeticity
    • Helium leakage test
    • FTIR spectroscopy
    • Micro resonator

 

Failure analysis, material modeling and deformation analysis

  • Chemical and structural analysis of materials: SEM with EDX, EBSD, 3D EDX, 3D EBSD, cross-section and optical microscopy
  • Physics failure analysis: 3D computer tomography, scanning accoustic
  • Thermo-mechanical material characterization: Young's modulus, coefficient of thermal expansion (CTE)
  • Elastic-plastic and creep characterization of bulk materials and thin films (-70  °C - 500 °C) by nanoindenter or shear test
  • Visco-elastic characterization – DMA, TMA, TGA-SA (humidity): Master curve (time, temperature, humidity) based on the time temperature superposition principle and visco-elastic material model for Ansys and Abaqus
  • Determination of fracture mechanics parameters for critical and sub-critical crack growth (-40 °C - 200 °C)
  • in situ 3D warpage, deformation and strain measurements of 1 x 1 mm² to 300 x 300 x 100 mm² objects by chromatic sensor, white light interferometry, confocal microscopy and in-plane gray scale image correlation (microDAC) in air, N2 or Ar between -80 °C and 400 °C with sub-micron resolution
  • Micro and nano hardness and strength testing on thin films, MEMS structures and membranes
  • Determination of rsidual mechanical stresses in BEOL thin films and MEMS structures with highest spatial resolution (down to 250 nm in-plane and 50 nm in depth) using fibDAC

 

Electrical characterization

  • Antenna measurement and characterization
  • RF network and spectrum analysis
  • EM near field characterization
  • Wafer probe: current-voltage, capacity-voltage, biased temperature stress, TVS measurements, mercury probe
    • Current-voltage
    • Capacity-voltage
    • Biased temperature stress
    • TVS measurements
    • Mercury probe