For the integration of new functionalities in optical/photonic, biotechnological/biological as well as microsystem-technological applications nanoscale structures are necessary. The structures can be fabricated using sequential exposure techniques like the electron beam lithography. However, these fabrication techniques are associated with high cost of ownership. In order to minimize the costs to a suitable level, there will be a large degree of development in the area of parallel lithography techniques (batch processing) like the Nanoimprint Lithography (NIL) in recent years. The NIL is used to transfer structures in the range of micrometer to nanometer from a master template in a substrate with support of a specially developed resist. The high-cost master template can be reproduced to working stamps by using polymers. Thus, the nanoimprint lithography is an interesting process for fabricating large-area nanostructures on wafer level for microsystem and microelectronic technologies to drastically reduce the costs per nanostructured wafer.
At the Fraunhofer Institute for Electronic Nano Systems ENAS exists a process flow for the adjusted UV nanoimprint lithography (NIL) for the fabrication of nanostructures. Finally the pattern can be transferred in the underlying material via dry etching techniques.
Advantages of the technology:
Parallel working methode
Nanostructuring of up to 6 inch round substrates
Lateral dimensions: < 50 nm
Higher throughput and lower costs than E-Beam lithography