Spintronic Devices

Spintronics at Fraunhofer ENAS

Since 2010, Fraunhofer ENAS has been active in the field of spintronics, with a particular focus on the development of magnetic field sensors based on the GMR (Giant Magnetoresistance) and TMR (Tunneling Magnetoresistance) effects. Our research centers on sensors with multidimensional sensitivity.

Our work focuses on the development and customization of sensor solutions for a variety of applications, such as measuring electric currents, positions, distances, or rotational movements. These are used in various industrial sectors, including the automotive industry, power electronics, and medical technology. To meet these diverse requirements, additional research and development efforts are often necessary. This includes investigating cross-sensitivities, contamination due to process variations, and adapting thermal and magnetic properties to specific application requirements.

Manufacturing and Technology

Our starting layer stacks, which consist of various materials with some sub-nanometer layer thicknesses, are typically prepared using magnetron sputtering. Subsequently, micro- or nanostructuring is performed using various structuring technologies (bottom-up, top-down). At our site, we are capable of conducting these processes for wafer diameters of up to 200 mm. Our offerings are complemented by extensive measurement technology for process monitoring and by magnetic and electrical characterization methods.

Technologies at the Site

• Wafer coating with complex thin-film stacks
• Lithography: UV stepper, electron beam lithography including mask design
• Micro & nanostructuring: ion beam etching, reactive ion etching, lift-off, and other processes
• Low-temperature CVD: production of layers such as Si-O, Si-N
• Chemical-mechanical planarization and polishing

Our Sensor Solutions

Monolithically integrated 2D magnetic field sensors based on GMR spin valves – Technical details (in German)

Collaboration with Fraunhofer IPMS in the Field of Spintronics

Fraunhofer ENAS closely collaborates with Fraunhofer IPMS to fully exploit the diverse possibilities of spintronics in various application areas. While we focus on the development of highly sensitive magnetic field sensors, Fraunhofer IPMS advances research in memory technology, particularly in magnetoresistive random access memory (STT-MRAM and SOT-MRAM) and racetrack memories (RTM). A key focus in all cases is the deposition of various magnetic layer stacks as well as the electrical-magnetic characterization of individual layers to functional devices.

This strategic cooperation is based on a shared cleanroom concept that allows us to optimally leverage our complementary strengths. For example, process technology can be mapped on up to 200 mm wafers at Fraunhofer ENAS, while Fraunhofer IPMS specializes in processing 300 mm wafers. By accessing the state-of-the-art cleanrooms of both institutes, we can handle customer requests more specifically and efficiently. Our partners and customers benefit from the combined expertise in this field and customized solutions.

Furthermore, both institutes are closely collaborating on the research of RF devices, another exciting application area of spintronics. This joint research allows us to develop innovative solutions for future wireless communication systems. By combining our strengths in sensor technology, memory technology, and RF devices, we offer comprehensive expertise and unique solutions for complex technical challenges.

For more information about the work at Fraunhofer IPMS, please find it here.