Analytics/Characterization

Preparation techniques for analytics

• Focused ion beam (FIB)
• Preparation for micrograph sections
• Sputtering: carbon, metals

 

Process-accompanying analytical methods

• Profilometry: tactile, optical (Datac, AFM, reflectometer, white light)
• XPS: surface, depth profile
• Wafer thickness
• Sheet resistance
• Wafer bow measurement
• Adhesion tests: 4 point bending
• Life time scanner
• Thermogavimetric analysis and differential scanning calorimetry
• (in situ) XPS spectroscopy
• (in situ) Raman spectroscopy

 

In situ plasma diagnostics for process optimization

• Optical emission spectroscopy
• Quadrupol mass spectrometry
• Quantum cascade laser absorption spectroscopy
• Langmuir probe

 

Optical inspection

• Spectroscopy: EDX, IR, FTIR, NIR, UV/Vis, fluorescence, Raman, spectral ellipsometry
• Microscopy: light, SEM, SEM/FIB, AFM, TEM, SAM, laser scanning, thermographic
• X-ray computer tomography
• White light interferometry

 

Bond quality evaluation

• Shear test
• Micro Chevron test (MCT)
• Bending test
• Tensile test
• Hermeticity
  • MEMS structures and pressure gauge
  • Helium leakage test
  • FTIR spectroscopy

 

Material and deformation analysis

• Material composition: EDX, laser scanning, LSAW, IR
• Material characterization: Young’s modulus, Poissons’s ratio, thermal expansion coefficient (CTE)
• Elastic-plastic and creep characterization of bulk materials and thin films (-70  °C … 500 °C)
• Visco-elastic characterization – DMA, TMA, TGA: Master curve, shift functions (time, temperature, humidity)
• Determination of fracture mechanics parameters for critical and sub-critical crack growth (-40 °C … 200 °C)
• 3D in situ warpage, deformation and strain measurements of 1 x 1 mm² … 300 x 300 mm² objects by chromatic sensor, white light interferometry, confocal microscopy or gray scale image correlation (microDAC) in air, N₂ or Ar between -80 °C and 400 °C with sub-micron resolution
• Micro and nano hardness and strength testing on films, MEMS structures and membranes
• fibDAC determination of the mechanical stresses in BEOL  film stacks and MEMS structures with highest spatial resolution (down to 250 nm in-plane and 50 nm in depth)
• Electromagnetic material assessment

 

Electrical characterization

• Antenna measurement and characterization
• RF network and spectrum analysis
• EM near field characterization
• Wafer probe: current-voltage, capacity-voltage, biased temperature stress, TVS measurements, mercury probe
  • Current-voltage
  • Capacity-voltage
  • Biased temperature stress
  • TVS measurements
  • Mercury probe