Scanning Electron Microscopy

ENAS-HP SEM overview image.
© Fraunhofer ENAS
Overview of scanning electron microscopy

Scanning electron microscopy (SEM) is a method for the detailed characterization of semiconductor structures and components. This measurement technique allows for the precise identification of defects, contaminants and structural errors on the micrometer and nanometer scale. It also enables high-resolution visualization of micro- and nanostructures with high depth of field.

To meet diverse measurement requirements, we utilize a wide range of SEM devices. These range from manual to fully automatic systems. For example, for statistical SEM investigations, we offer our fully automatic solution (CD-SEM), providing fast and reliable results.

 

CD-SEM - Critical Dimension Scanning Electron Microscopy

 

Scanning Electron Microscopy - Manual Analysis

Scanning electron microscopy, focused ion beam, energy dispersive x-ray, electron backscatter diffraction