Fraunhofer Institute for Electronic Nano SystemsOur scanning electron microscopes enable the precise analysis of various materials and samples. These include, among others:
Scanning Electron Microsopy - Manual Analysis
FIB images of different samples (wafer, section, coupon)
FIB recording for the development of a VIA metallization module
Layer thickness and defect characterization, particularly FIB: Analysis of micro defects by creating local precision cuts using a focused ion beam (FIB). The selective removal or ablation of material allows cross-sectioning of samples for SEM imaging. FIB cross-sectioning for visualization of deep structures, identification of delaminations and determination of layer thicknesses.
Surface images (TV-SEM) of a MEMS section (left) and Cu pillars (right)
Surface images (TV-SEM) of solder and sinter layers at different magnifications (left and right)
Surface characterization: High-resolution SEM images of surface structures and topography of various samples such as 4" to 8" wafers, fragments, semiconductor devices, embedded samples (SEM sections) and many more.
Example of an EDX analysis for residues on a sample surface, SEM image (left) and EDX spectrum (right)
Element characterization: Energy dispersive x-ray spectroscopy (EDX, EDS) analysis of chemical material composition to determine the elemental distribution on the surface of a sample (EDX spectrum) as well as the creation of elemental distribution maps (mapping). It enables the chemical analysis of materials by measuring the characteristic x-ray radiation generated by the elements in the sample area of the SEM.
EBSD image (left) with corresponding forescatter image (right)
Crystallographic material characterization: Phase, texture and grain size analysis using electron backscatter diffraction (EBSD). This method provides information on grain orientation, lattice deformations as well as phase identification.