MEMS Technology for RF Components
Objective:
- Reliable RF switch with large actuation electrode area for high actuation force
Technologie:
- Fabrication Technology:
– Silicon micromachining technology
– Air gap Insulated Micromachining (AIM)
– Noble metal in contact area - Packaging:
– Cost-efficient packaging (zero level) by seal glass bonding
– Lateral feed through of signal lines
– Maximum RF performance even in mm-wave frequency range
Benefits:
- Low actuation voltage (< 5 Volt)
- Low insertion
- Low loss, high isolation
- Excellent non-linearity (IP3 > 70 dBm)
- No charging effect
- Low cross talk between actuation and RF signal due to separate sections
--> FPI