Nano Device Technologies

Low-k- and ultra low-k Analytics

A wide spectrum of methods to analyse dense and porous low-k dielectric materials is available at Fraunhofer ENAS, which includes the determination of optical, electrical, mechanical, thermal and structural material's properties.


Spectral ellipsometry

  • Equipment: Sentech SE 850
  • Spectral range: 190 nm – 2550 nm
  • Incident angle: 40° – 90°
  • Substrate sizes: up to 300 mm
  • Free programmable mapping scripts
  • Determination of the refractive index, film thicknesses, homogeneity


Mercury probe (CV measurement)

  • Equipment: Solid State Measurements SSM 495
  • Sample sizes: up to 200 mm
  • Determination of leakage currents, break through voltages, k-values of insulator thin films
  • Free programmable mapping scripts


3ω measurement

  • Determination of thermal conductivity (transient hot wire method)
  • Simple Aluminium heater structure on the dielectric is used for measurements
  • Structure preparation is very easy compared to non-contact methods



  • Equipment: UMIS Nanoindentation System (CSIRO, Australia)
  • Several indenter types are available: Berkovich, spherical, pyramidical
  • Determination of hardness, Young's modulus, yield stress



  • Equipment: BRUKER VERTEX 80v and BRUKER IFS 66
  • Analysis of structural / chemical material properties, for low-k materials in special changes within the Si-O-Si backbone, damage and curing effects, removal of porogens, etc.


Fig. 1: Example for the determination of the yield stress.
Fig. 2: Heater structures used for 3omega measurements.
Fig. 3: Example for a mapping of the film thickness using spectral ellipsometry.