IBE - Ion Beam Etching

Another area of expertise at Fraunhofer ENAS is the precise structuring of various material surfaces using ion beams (IBE - Ion Beam Etching), for example, for spintronic applications. By using high-energy ion beams, we can structure materials in a targeted and efficient manner. We are particularly experienced in structuring multilayer stacks. These can consist of several different metals or even non-volatile materials that have a high level of contamination, such as gold and silver. Research activities are ongoing for the structuring of non-linear crystals like LiNbO₃ or LiTaO₃. We also process optically transparent materials such as ZnO and ITO using ion beams.

For all structuring processes, an endpoint system (SIMS; Secondary Ion Mass Spectrometry) is used to analyze the layer composition via secondary ions. This method is utilized to precisely halt the etching process on the desired layer.

Our processes are optimized to eliminate the phenomenon of fencing at the structural sidewalls, known from manufacturing technology. This is achieved using special photoresist and the ability to tilt the sample during the structuring process.

Thus, our team of highly qualified scientists creates customized surface properties according to your specific requirements.