Fraunhofer Institute for Electronic Nano SystemsDevice simulation is a very efficient tool for test, design and optimization of any electronic device. Simulation tools are available for simulation of devices from the nano- to the macroscale. Available physical models include advanced transport models for electrons and holes as well as optoelectronic effects. On the nanoscale, quantum effects can be considered based on effective models.
Available Software
Commercial TCAD-software including comprehensive material database
Proprietary software solutions for transport in nanoscale interconnects
Software development for special models on user demand
Combination with process- and equipment simulation available
Combination with atomistic methods for the analysis of unknown material parameters vailable
High performance computing hardware
Efficient calculation of complex device models
Highly parallel parameter scanning based on device models
TCAD based device simulation of ULSI transistors
Generation of 2D/3D transistor models for thermo-mechanical simulation based user defined process flows or TEM cross sections
Development of mobility models
Analysis of strained silicon technologies including strained contact metallization
Scaling analysis
Device simulation of solar cells
Cell models including front side selective emitter, emitter diffusion and local back side for various cell concepts (PERL, PERC, LOBACO …)
Optimization of cell efficiency for different technologies
Simulation of on chip interconnects
Current and heat flow in 3D interconnect structures
Scattering at grains and edges