RF MEMS
MEMS components for RF, micro wave and mm-wave applications are very attractive when the RF circuit demands parameters that are superiors in comparison to solid state RF components particularly in terms of extremely high signal frequencies (> 20 GHz), very good nonlinearity (IIP3> 50 dBm) and high signal power (> 20 dBm). RF MEMS switches, tunable capacitors, reconfigurable phase shifters and micro coils have been in the focus of the research.
RF MEMS components are manufactured at ENAS together with cooperation partners using 3D bulk micromaching technology, SOI- and Cavity SOI MEMS technology as stand-alone device for direct integration into PCBs based on FR4, ceramics or special substrate material. The electrostatic actuation of movable internal parts leads to the desired variation of the RF characteristic (switch state, capacitance, phase shift).