Variable Angle Spectroscopic Ellipsometry

© J.A.Woollam
Schematic illustration of the reflection of linearly polarized light upon striking a sample and representation of the ellipsometric angles

Spectroscopic ellipsometry with variable angle (VASE) is indispensable in the fields of research and development. As an essential characterization technique, it is an important and powerful measurement method for the investigation of new materials and processes, as well as for process control of thin and ultra-thin metallic and non-metallic layers and thin film systems.

The method measures the elliptic polarization of light being caused by linearly polarized light striking a sample and triggering interactions between the light and the material. Since ellipsometry measures the ratio of two values, it is extremely accurate and reproducible with no reference material being required. The use of spectroscopic ellipsometry (SE) leads to increased sensitivity to multiple film parameters and also eliminates the period problem associated with interference fringes in thick films. Adding multiple angles to the spectroscopic capability (VASE) provides new information due to the different optical path lengths traveled and optimizes sensitivity to unknown parameters.

© Fraunhofer ENAS
Ellipsometer Woollam RC2

The following features distinguish the Woolam RC2 ellipsometer:

  • Automatic measurement system for 4'', 6'', 8'' wafers and wafer pieces
  • Wide spectral range from UV/VIS to NIR: 210 nm - 1600 nm
  • Fast measurement speed
  • Wafer mapping with fully automated sample translation
  • Flexible configurations:
    • Automated incident angle (45° to 90° with ±0.03° accuracy)
    • Highly focused spot (spot size up to 120 µm)
  • Measurement of coatings on transparent substrates as well as reflective substrates or underlying metallic layers
  • Determination of all 16 elements of the 4x4 Mueller matrix
© Fraunhofer ENAS
Wafer map in the form of a spiral of a 200 mm glass substrate with a tantalum oxide layer
© Fraunhofer ENAS
Measured Psi and Delta curves at incident angles of 65° and 70° of the tantalum pentoxide layer on glass substrate at measurement point x = -94.04 and y = -11.57