For UV projection lithography at Fraunhofer ENAS, an i-line projection lithography system NSR2205i11D (wafer stepper) from NIKON is available, which achieves resolutions up to 350 nm with a maximum image field of 22 mm x 22 mm and simultaneously enables high throughput. Compared to UV contact and proximity exposure, this allows for higher resolution while still maintaining high throughput. This enables cost-effective realization of complex designs of microstructures and nanostructures on various substrates for a variety of applications, such as:
- Optics
- Photonics (gratings, 2.5D and 3D structures, grayscale structures)
- Micro-/nanoelectronics
- Micro-Electro-Mechanical Systems (MEMS)
- Nano-Electro-Mechanical Systems (NEMS)
- Micro-Opto-Electro-Mechanical Systems (MOEMS)
- Mastering/Master fabrication for Nano-Imprint Lithography (NIL)
Processable substrates include:
- 6” Flat & 8” Notch Semi Std. Silicon wafers
- 6”, 8” wafers with thicknesses not conforming to SEMI Std. from 300 µm to 950 µm wafer thickness
- Transparent substrates, such as glass wafers
- Special substrates or even 4” substrates can be processed using adapter wafers and corresponding chucking tools
Depending on customer needs and specifications, various resist systems are used to optimally meet the requirements, for example, for dry etching or lift-off applications. The necessary layout adjustments, optimizations in exposure, and etching are performed in-house to be optimally coordinated.
The execution of overlay exposures with alignment to global marks and chip marks is an essential part of our work. This is used, for example, in MEMS and NEMS with high overlay requirements (alignment from layer to layer).