Major advantage within the MEMS packaging no additional intermediate layers are required Dielectric barrier discharge (DBD):
- Stable plasma at atmospheric pressure
- No expensive equipment for vacuum generation
Special high surface quality of the process wafers are essential:
- Surface roughness < 0.5 nm (10 x 10 μm²)
- Flatness < 30 μm
- Local thickness variation < 1 μm
Low temperature Wafer bonding (T < 200 °C) of heterogeneous materials, e.g. Silicon-Foturan©, Silicon-Lithium tantalate.
High Bond strength.
Transfer of this technique within a mask aligner is realized.