Veröffentlichungen und Patente:
Geßner, T.; Schulz, S. E. ; Wächtler, T.; Lang, H.; Jakob, A.: Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens. https://patents.google.com/patent/WO2009071076A1/de
Wächtler, T.; Schulz, S.E.; Gessner, T.; Mueller, S.; Tuchscherer, A.; Lang, H.: Method for the production of a substrate having a coating comprising copper and coated substrate and device prepared by this method. https://patents.justia.com/patent/20130062768
Wächtler, T.; Gessner, T.; Schulz, S.E.; Lang, H.; Jakob, A.: Substrate Having a Coating Comprising Copper and Method for the Production Thereof by Means of Atomic Layer Deposition. https://patents.justia.com/patent/20100301478
Melzer, M.; Wächtler, T.; Müller, S.; Fiedler, H.; Hermann, S.; Rodriguez, R.D.; Villabona, A.: Copper Oxide Atomic Layer Deposition on Thermally Pretreated Multi-Walled Carbon Nanotubes for Interconnect Applications. Microelectronic Engineering 107 (2013) p 223–28. https://doi.org/10.1016/j.mee.2012.10.026
Georgi, C.; Hildebrandt, A.; Wächtler, T.; Schulz, S. E.; Gessner, T.; Lang, H.: A Cobalt Layer Deposition Study: Dicobaltatetrahedranes as Convenient MOCVD Precursor Systems. Journal of Materials Chemistry C 2, 23 (2014) p 4676–82. https://doi.org/10.1039/c4tc00288a
Hu, X.; Schuster, J.; Schulz, S.E.; Gessner, T.: Simulation of ALD Chemistry of (NBu3P)2Cu(Acac) and Cu(Acac)2 Precursors on Ta(110) Surface. Microelectronic Engineering 137 (2015) p 23–31. https://doi.org/10.1016/j.mee.2015.02.017
Dhakal, D.; Khaybar A.; Lang, H.; Bruener, P.; Grehl, T.; Georgi, C.; Waechtler, T.; Ecke, R.; Schulz, S.E.; Gessner, T.: Atomic Layer Deposition of Ultrathin Cu2O and Subsequent Reduction to Cu Studied by in Situ X-Ray Photoelectron Spectroscopy. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34, 1 (2016) p 01A111. https://doi.org/10.1116/1.4933088