The available tools for atomic layer deposition are, a FlexAl-chamber (Oxford Instruments), an Atol200 (scia Systems), and two chambers at the Microcluster (Roth&Rau Microsystems).
This equipment offers common standardized processes (especially at the Oxford FlexAl) with conventional bubbler evaporators for precursors revealing high vapor pressure. On the other hand, the Microcluster offers a wide flexibility for the evaluation of new precursors with its direct liquid evaporation systems. Here, precursors with a low vapor pressure can be processed, too, and further analyzed. The analysis is done using e.g. the in-vacuo XPS (x-ray photoelectron spectroscopy).
The Atol200 closes the gap between the other tools: equipped with bubblers and direct evaporation systems, ALD processes can be evaluated, developed and optimized, for a wide range of precursor systems. This is supported by integrated spectroscopic ellipsometry, and the non-contact resistance measurement chamber. All tools are designed to process 200 mm wafers. Smaller substrates can be handled and processed on request.
Publications and Patents
Geßner, T.; Schulz, S.E. ; Wächtler, T.; Lang, H.; Jakob, A.: Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens. DE 10 2007 058 571 B4. Chemnitz, filed 5 December 2007, and issued 16 February 2012.
Wächtler, T.; Schulz, S.E.; Gessner, T.; Mueller, S.; Tuchscherer, A.; Lang, H.: Method for the production of a substrate having a coating comprising copper and coated substrate and device prepared by this method. US 2013/0062768 A1, filed 14 September 2011, and issued 14 March 2013.
Wächtler, T.; Gessner, T.; Schulz, S.E.; Lang, H.; Jakob, A.: Substrate Having a Coating Comprising Copper and Method for the Production Thereof by Means of Atomic Layer Deposition. US 8,507,038 B2, filed 4 June 2010, and issued 13 August 2013.
Melzer, M.; Wächtler, T.; Müller, S.; Fiedler, H.; Hermann, S.; Rodriguez, R.D.; Villabona, A.: Copper Oxide Atomic Layer Deposition on Thermally Pretreated Multi-Walled Carbon Nanotubes for Interconnect Applications. Microelectronic Engineering 107 (2013) p 223–28. https://doi.org/10.1016/j.mee.2012.10.026.
Georgi, C.; Hildebrandt, A.; Wächtler, T.; Schulz, S. E.; Gessner, T.; Lang, H.: A Cobalt Layer Deposition Study: Dicobaltatetrahedranes as Convenient MOCVD Precursor Systems. Journal of Materials Chemistry C 2, 23 (2014) p 4676–82. https://doi.org/10.1039/c4tc00288a
Hu, X.; Schuster, J.; Schulz, S.E.; Gessner, T.: Simulation of ALD Chemistry of (NBu3P)2Cu(Acac) and Cu(Acac)2 Precursors on Ta(110) Surface. Microelectronic Engineering 137 (2015) p 23–31. https://doi.org/10.1016/j.mee.2015.02.017
Dhakal, D.; Khaybar A.; Lang, H.; Bruener, P.; Grehl, T.; Georgi, C.; Waechtler, T.; Ecke, R.; Schulz, S.E.; Gessner, T.: Atomic Layer Deposition of Ultrathin Cu2O and Subsequent Reduction to Cu Studied by in Situ X-Ray Photoelectron Spectroscopy. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34, 1 (2016) p 01A111. https://doi.org/10.1116/1.4933088