IEEE Internationale Semiconductor Conference Dresden-Grenoble (ISCDG)
International Conference, Short Course and Table Top Exhibition
Technology, Design, Packaging, Simulation and Test
September, 26 - 27, 2013 - Dresden, Germany
An extended abstract of one page text and one page figures is sufficient for the paper selection (deadline June, 9, 2013). For the conference proceedings we will need the full 3-4 pages paper at a later point in time.
Scope of the Conference:
Meet Leading Players and Experts at the ISCDG 2013 in Dresden, Germany. The panel presentations will be given on Power Semiconductors in 300mm (Infineon), on Advanced CMOS (STM), on Foundry Technologies (GlobalFoundries) and Automotive Power Technologies.
Grenoble and Dresden are the two major European Semiconductor Research, Development and Production sites. In the proceeding editions of 2009 and 2011, the conference was named “Semiconductor Conference Dresden”.
The objective of the ISCDG is to enhance the visibility of international excellence of the European players. The first edition of ISCDG was held in 2012 in Grenoble. The 2013 ISCDG will be held in Dresden. The venue will be alternating in Dresden and Grenoble every other year.
Materials, devices and systems science, engineering and architectures and their characterization
- Integrated Circuit and System Design
- More Moore and Beyond Moore Devices Technologies and Architectures
- Memory Technologies
- More than Moore Technologies
- Interconnection and Packaging Technologies
- Optical Devices and Photonics
- Organic and Flexible Electronics
- Characterization, Quality and Reliability
- Modeling and Simulation
Friday, September 27, 2013
1:00pm - 1:30pm
Thermo-mechanical Reliability Assessment in 3-D Integration with Focus on CPI
Rainer Dudek, Fraunhofer ENAS
1:50pm - 2:10pm
Finite Elemente Analysis for BEOL Stress Engineering to Improve Yield and Reliability
Eberhard Kaulfersch, Fraunhofer ENAS
11:20am - 11:40am
Customized Printed Batteries Driving Sensor Applications
Andreas Willert, Fraunhofer ENAS
5:00pm - 5:20pm
Development and Characterization of 3D Integration Technologies for MEMS based on Copper TSV's and Copper-to-Copper Metal Thermo Compression Bonding
Mario Baum, Fraunhofer ENAS