RF MEMS

Objective:

• Reliable RF switch with large actuation electrode area for high actuation force

Technologie:

• Fabrication Technology:
  – Silicon micromachining technology
  – Air gap Insulated Micromachining (AIM)
  – Noble metal in contact area
• Packaging:
  – Cost-efficient packaging (zero level) by seal glass bonding
  – Lateral feed through of signal lines
  – Maximum RF performance even in mm-wave frequency range

Benefits:

• Low actuation voltage (< 5 Volt)
• Low insertion
• Low loss, high isolation
• Excellent non-linearity (IP3 > 70 dBm)
• No charging effect
• Low cross talk between actuation and RF signal due to separate sections

-->  FPI