Low-Temperature Bonding By Using Surface Plasma Activation

Major advantage within the MEMS packaging no additional intermediate layers are required Dielectric barrier discharge (DBD):

• Stable plasma at atmospheric pressure
• No expensive equipment for vacuum generation

Special high surface quality of the process wafers are essential:

• Surface roughness < 0.5 nm (10 x 10 μm²)
• Flatness < 30 μm
• Local thickness variation < 1 μm

Low temperature Wafer bonding (T < 200 °C) of heterogeneous materials, e.g. Silicon-Foturan©, Silicon-Lithium tantalate.
High Bond strength.
Transfer of this technique within a mask aligner is realized.