System integration and packaging technologies are very imoprtant in the value added chain of micro technical products.Due to the broad range o customer-specific requirements integration technologies contribute between 20 and 95% to the component costs. Fraunhofer ENAS focuses on zero level and first level packaging and develops methodes and technologies for hybrid, monolithic and vertical integration of MEMS/NEMS with electronic components. The department System Packaging and partly Back-end of Line contribute to this core competence.

Since the ealy 90s first wafer bonding technologies such as silicon direct and anodic bonding have been developed in Chemnitz. With the increasing materials and structure complexity it is a challenge to join very different materials and to bridge surface topographies. This is possible by applying different intermediate layers such as glasss, polymers or metals, which are used and investigated in new bonding technologies like eutectic bonding, glass frit bonding and adhesive bonding.

The request to hogher integration densities was a main premise for the development of technologies for structuring through silicon vias (TSV) and for the development of TSV metallization. In parallel barrier and isolation techniques had to be applied and developed further. With increasing experiences it was possible to switch from hybrid to vertical system integration. Fraunhofer ENAS offers now integration technologies based on hybrid as well as vertical technologies.

A big strenght of the core competence is the close connection th the basic research by cooperating with the Center for MIcrotechnologies of Chemnitz University of Technology. The interaction with MEMS/NEMS and TSV development at Fraunhofer ENAS and the cooperation with Fraunhofer IZM/ASSID stregthen also the core competence.

A unique feature is the availability of a broad variety of bonding technologies for MEMS/NEMS and electronic components based on 4,6 and 8 inch substrates. Moreover there is a focus on the development of low temperature bonding, bonding with reactive nano layers as well as Cu-CVD and Cu-ECD for starting layer deposition as well as complete filling of TSVs.