Scanning electron microscope

Asorber chamber for antenna measurement

Analytics/Characterization

Preparation techniques for analytics

  • Focused ion beam (FIB)
  • Preparation for micrograph sections
  • Sputtering: carbon, metals

 

Process-accompanying analytical methods

  • Profilometry: tactile, optical (Datac, AFM, reflectometer, white light)
  • XPS: surface, depth profile
  • Wafer thickness
  • Sheet resistance
  • Wafer bow measurement
  • Adhesion tests: 4 point bending
  • Life time scanner
  • Thermogavimetric analysis and differential scanning calorimetry
  • (in situ) XPS spectroscopy
  • (in situ) Raman spectroscopy

 

In situ plasma diagnostics for process optimization

  • Optical emission spectroscopy
  • Quadrupol mass spectrometry
  • Quantum cascade laser absorption spectroscopy
  • Langmuir probe

 

Optical inspection

  • Spectroscopy: EDX, IR, FTIR, NIR, UV/Vis, fluorescence, Raman, spectral ellipsometry
  • Microscopy: light, SEM, SEM/FIB, AFM, TEM, SAM, laser scanning, thermographic
  • X-ray computer tomography
  • White light interferometry

 

Bond quality evaluation

  • Shear test
  • Micro Chevron test (MCT)
  • Bending test
  • Tensile test
  • Hermeticity
    • MEMS structures and pressure gauge
    • Helium leakage test
    • FTIR spectroscopy

 

Material and deformation analysis

  • Material composition: EDX, laser scanning, LSAW, IR
  • Material characterization: Young’s modulus, Poissons’s ratio, thermal expansion coefficient (CTE)
  • Elastic-plastic and creep characterization of bulk materials and thin films (-70  °C … 500 °C)
  • Visco-elastic characterization – DMA, TMA, TGA: Master curve, shift functions (time, temperature, humidity)
  • Determination of fracture mechanics parameters for critical and sub-critical crack growth (-40 °C … 200 °C)
  • 3D in situ warpage, deformation and strain measurements of 1 x 1 mm² … 300 x 300 mm² objects by chromatic sensor, white light interferometry, confocal microscopy or gray scale image correlation (microDAC) in air, N2 or Ar between -80 °C and 400 °C with sub-micron resolution
  • Micro and nano hardness and strength testing on films, MEMS structures and membranes
  • fibDAC determination of the mechanical stresses in BEOL  film stacks and MEMS structures with highest spatial resolution (down to 250 nm in-plane and 50 nm in depth)
  • Electromagnetic material assessment

 

Electrical characterization

  • Antenna measurement and characterization
  • RF network and spectrum analysis
  • EM near field characterization
  • Wafer probe: current-voltage, capacity-voltage, biased temperature stress, TVS measurements, mercury probe
    • Current-voltage
    • Capacity-voltage
    • Biased temperature stress
    • TVS measurements
    • Mercury probe